amplifiers - l ine a r & p ower - chip 3 3 - 1 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com 9 9 - 1 amplifiers - l ine a r & p ower - sm t HMC965LP5E v02.0711 general description features functional diagram the hm c965 lp 5 e is a 4 stage gaas p hem t mmi c 2 w att p ower amplifer with an integrated temperature compensated on-chip power detector which operates between 12.5 and 15.5 g h z. the hm c965 lp 5 e provides 27 db of gain, +34 dbm of saturated output power, and 20% p a e from a +6v supply. the hm c965 lp 5 e exhibits excellent linearity and is optimized for high capacity digital microwave radio. i t is also ideal for 13.75 to 14.5 g h z ku band v s at transmitters as well as s atc om applications. the hm c965 lp 5 e amplifer i / o s are internally matched to 50 o hms and is packaged in a leadless q fn 5x5 mm surface mount package and requires no external matching components. s aturated o utput p ower: +34 dbm @ 20% p a e h igh o utput ip 3: +40 dbm h igh gain: 27 db dc s upply: +6v @ 1200 ma n o e xternal m atching r equired electrical specifcations t a = +25 c, vdd = vdd1 = vdd2 = vdd3 = vdd4 = vdd5 = +6v, idd = 1200 ma [1] typical applications the hm c965 lp 5 e is ideal for: ? point-to-point radios ? point-to-multi-point radios ? vsat & satcom ? military & space p arameter m in. typ. m ax. units f requency r ange 12.5 - 15.5 g h z gain [3] 24 27 db gain variation o ver temperature 0.05 db/ c i nput r eturn l oss 12 db o utput r eturn l oss 12 db o utput p ower for 1 db compression ( p 1db) 30 32 dbm s aturated o utput p ower ( p sat) 34 dbm o utput third o rder i ntercept ( ip 3) [2] 40 dbm total s upply current ( i dd) 1200 ma [1] adjust vgg between -2 to 0v to achieve i dd = 1200ma typical. [2] m easurement taken at +6v @ 1200 ma, p out / tone = +22 dbm [3] board loss subtracted out gaas phemt mmic 2 watt power amplifier smt with power detector, 12.5 - 15.5 ghz
amplifiers - l ine a r & p ower - chip 3 3 - 2 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ine a r & p ower - sm t 9 9 - 2 input return loss vs. temperature output return loss vs. temperature broadband gain & return loss vs. frequency [1] gain vs. temperature [1] p1db vs. temperature p1db vs. supply voltage HMC965LP5E v02.0711 gaas phemt mmic 2 watt power amplifier smt with power detector, 12.5 - 15.5 ghz -30 -20 -10 0 10 20 30 10 11 12 13 14 15 16 17 18 s21 s11 s22 frequency (ghz) response (db) 18 22 26 30 34 38 12 13 14 15 16 +25c +85c -40c frequency (ghz) gain (db) -20 -16 -12 -8 -4 0 12 13 14 15 16 +25c +85c -40c frequency (ghz) return loss (db) -30 -25 -20 -15 -10 -5 0 12 13 14 15 16 +25c +85c -40c frequency (ghz) return loss (db) 26 28 30 32 34 36 38 12 13 14 15 16 +25c +85c -40c frequency (ghz) p1db (dbm) 26 28 30 32 34 36 38 12 13 14 15 16 5v 6v frequency (ghz) p1db (dbm) [1] board loss subtracted out
amplifiers - l ine a r & p ower - chip 3 3 - 3 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com 9 9 - 3 amplifiers - l ine a r & p ower - sm t output ip3 vs. supply current, pout/tone = +22 dbm output ip3 vs. temperature, pout/tone = +22 dbm psat vs. supply current (idd) p1db vs. supply current (idd) HMC965LP5E v02.0711 gaas phemt mmic 2 watt power amplifier smt with power detector, 12.5 - 15.5 ghz 26 28 30 32 34 36 38 12 13 14 15 16 1100 ma 1200 ma 1300 ma frequency (ghz) p1db (dbm) 26 28 30 32 34 36 38 12 13 14 15 16 1100 ma 1200 ma 1300 ma frequency (ghz) psat (dbm) 30 32 34 36 38 40 42 44 46 48 12 13 14 15 16 +25c +85c -40c frequency (ghz) ip3 (dbm) 30 32 34 36 38 40 42 44 46 48 12 13 14 15 16 1100 ma 1200 ma 1300 ma frequency (ghz) ip3 (dbm) psat vs. temperature psat vs. supply voltage 28 30 32 34 36 38 12 13 14 15 16 +25c +85c -40c frequency (ghz) psat (dbm) 28 30 32 34 36 38 12 13 14 15 16 5v 6v frequency (ghz) psat (dbm)
amplifiers - l ine a r & p ower - chip 3 3 - 4 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ine a r & p ower - sm t 9 9 - 4 HMC965LP5E v02.0711 gaas phemt mmic 2 watt power amplifier smt with power detector, 12.5 - 15.5 ghz power compression @ 14 ghz detector voltage over temperature output ip3 vs. supply voltage, pout/tone = +22 dbm output im3 @ vdd = +6v output im3 @ vdd = +5v 30 32 34 36 38 40 42 44 46 48 12 13 14 15 16 5v 6v frequency (ghz) ip3 (dbm) 0 10 20 30 40 50 60 70 80 10 12 14 16 18 20 22 24 13 ghz 14 ghz 15 ghz pout/tone (dbm) im3 (dbc) 0 10 20 30 40 50 60 70 80 10 12 14 16 18 20 22 24 13 ghz 14 ghz 15 ghz pout/tone (dbm) im3 (dbc) 0 5 10 15 20 25 30 35 40 -10 -8 -6 -4 -2 0 2 4 6 8 10 pout gain pae input power (dbm) pout (dbm), gain (db), pae (%) 0.01 0.1 1 10 -5 3 11 19 27 35 12.5 ghz +25c 12.5 ghz +85c 12.5 ghz -55c 15.5 ghz +25c 15.5 ghz +85c 15.5 ghz -55c output power (dbm) vref-vdet (v) reverse isolation vs. temperature -90 -80 -70 -60 -50 -40 -30 -20 -10 0 11 12 13 14 15 16 17 +25c +85c -40c frequency (ghz) isolation (db)
amplifiers - l ine a r & p ower - chip 3 3 - 5 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com 9 9 - 5 amplifiers - l ine a r & p ower - sm t HMC965LP5E v02.0711 gaas phemt mmic 2 watt power amplifier smt with power detector, 12.5 - 15.5 ghz absolute maximum ratings drain bias voltage (vdd) +8v rf i nput p ower ( rfin ) +24 dbm channel temperature 150 c continuous p diss (t= 85 c) (derate 137 m w /c above 85 c) 8.9 w thermal r esistance (channel to ground paddle) 7.3 c/ w s torage temperature -65 to +150 c o perating temperature -55 to +85 c es d s ensitivity ( h b m ) class 1a vdd (v) idd (ma) +5.0 1200 +6.0 1200 note: amplifer will operate over full voltage ranges shown above. vgg adjusted to achieve idd = 1200 ma. typical supply current vs. vdd ele ct ros tat ic sensi t i v e de v ic e o b ser v e h a n d lin g pre caut ions power dissipation gain & power vs. supply current @ 14 ghz gain & power vs. supply voltage @ 14 ghz 20 25 30 35 40 45 50 5 5.5 6 gain p1db psat vdd (v) gain (db), p1db (dbm), psat (dbm) 15 20 25 30 35 40 1100 1150 1200 1250 1300 gain p1db psat idd (ma) gain (db), p1db (dbm), psat (dbm) 0 1 2 3 4 5 6 7 8 9 10 -10 -8 -6 -4 -2 0 2 4 6 8 max pdis @ 85c 12 ghz 13 ghz 14 ghz 15 ghz 16 ghz power dissipation (w) input power (dbm)
amplifiers - l ine a r & p ower - chip 3 3 - 6 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ine a r & p ower - sm t 9 9 - 6 HMC965LP5E v02.0711 gaas phemt mmic 2 watt power amplifier smt with power detector, 12.5 - 15.5 ghz outline drawing pin descriptions p in n umber f unction description i nterface s chematic 1 - 3, 6, 7, 10 - 12, 16, 22 - 24, 27, 32 n /c these pins are not connected internally, however all data shown herein was measured with these pins connected to rf /dc ground externally. 4 rfin this pad is dc coupled and matched to 50 o hms. 5, 8, 14, 17, 20, 25, 31 g n d these pins and package bottom must be connected to rf /dc ground. 9 vgg1 gate control for amplifer. e xternal bypass capacitors of 100 p f , 10 n f and 4.7 u f are required. p art n umber p ackage body m aterial l ead f inish msl r ating p ackage m arking [1] hm c965 lp 5 e r o hs -compliant l ow s tress i njection m olded p lastic 100% matte s n msl 1 [2] h 965 xxxx [1] 4-digit lot number xxxx [2] m ax peak refow temperature of 260 c package information no t es : 1. le ad fr a me m at eri a l : c opper a llo y 2. d imensions a re in in c hes [ millime t ers ] 3. le ad sp ac in g t oler a n c e is non -cu m u l at i v e . 4. p ad bu rr len gt h sh a ll b e 0.15mm m ax im u m . p ad bu rr hei g h t sh a ll b e 0.05mm m ax im u m . 5. p ackag e w a rp sh a ll not e xc ee d 0.05mm. 6. a ll g ro u n d le ad s a n d g ro u n d p add le m u s t b e sol d ere d to p cb rf g ro u n d. 7. refer to hi tt i t e a ppli cat ion not e for s ugg es t e d l a n d p att ern .
amplifiers - l ine a r & p ower - chip 3 3 - 7 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com 9 9 - 7 amplifiers - l ine a r & p ower - sm t application circuit HMC965LP5E v02.0711 gaas phemt mmic 2 watt power amplifier smt with power detector, 12.5 - 15.5 ghz p in n umber f unction description i nterface s chematic 13, 15, 26, 28 - 30 vdd5, vdd4, vdd4, vdd3, vdd2, vdd1 drain bias voltage for the amplifer. e xternal bypass capacitors of 100p f , 10n f and 4.7 f capacitors are required. p ins 15 and 26 are connected internally vdd4 may be applied to either pin 15 or pin 26 18 vref dc voltage of diode biased through external resistor, used for temperature compensation of vdet. 19 vdet dc voltage representing rf output power rectifed by diode which is biased through an external resistor. 21 rfo ut this pin is dc coupled and matched to 50 o hms. pin descriptions (continued)
amplifiers - l ine a r & p ower - chip 3 3 - 8 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ine a r & p ower - sm t 9 9 - 8 HMC965LP5E v02.0711 gaas phemt mmic 2 watt power amplifier smt with power detector, 12.5 - 15.5 ghz evaluation pcb i tem description j1, j2, j5, j6 k connector, sri j3, j4 dc p in c1, c5 - c11 100 p f capacitor, 0402 p kg. c12, c16 - c27 10 n f capacitor, 0402 p kg. c23, c27 - c33 4.7 f capacitor, case a. u1 hm c965 lp 5 e p ower amplifer p cb [2] 600-00048-00 e valuation p cb [1] r eference this number when ordering complete evaluation p cb [2] circuit board m aterial: r ogers 4350 or arlon fr 4 the circuit board used in the application should use rf circuit design techniques. s ignal lines should have 50 o hm impedance while the package ground leads and exposed paddle should be con - nected directly to the ground plane similar to that shown. a sufficient number of via holes should be used to connect the top and bottom ground planes. the evaluation board should be mounted to an appropriate heat sink. the evaluation circuit board shown is available from h ittite upon request. list of materials for evaluation pcb eval01-HMC965LP5E [1]
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